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| SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 JANUARY 1996 PIN CONFIGURATION 7 PARTMARKING DETAILS SEE TUNING CHARACTERISTICS FMMV2101 to FMMV2109 1 3 2 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Reverse Voltage Forward Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VR IF Ptot Tj:Tstg VALUE 30 200 330 -55 to +150 UNIT V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance SYMBOL VBR IR LS 3.0 280 0.15 400 MIN. 30 20 TYP. MAX. UNIT V nA nH ppm/ C pF CONDITIONS. IR = 10A VR = 25V f=250MHz Lead length1.5mm VR = 4V, f=1MHz Lead length1.5mm f=1MHz Diode Capacitance TCC Temperature Coefficient Case Capacitance CC TUNING CHARACTERISTICS (at Tamb = 25C). Type No. FMMV2101 FMMV2103 FMMV2104 FMMV2105 FMMV2107 FMMV2108 FMMV2109 Nominal Capacitance (pF) VR = 4V, f=1MHz Nom. 6.8 10.0 12.0 15.0 22.0 27.0 33.0 Q Figure of MERIT VR = 4V, f=50MHz 450 400 400 400 350 300 280 Min. 6.1 9.0 10.8 13.5 19.8 24.3 29.3 Max. 7.5 11.0 13.2 16.5 24.2 29.7 36.3 Turning Ratio C2 / C30 f=1MHz Min. Max. 2.5 3.3 2.6 3.3 2.6 3.3 2.6 3.3 2.7 3.3 2.7 3.3 2.7 3.3 Partmark Detail 6R 6G 6H 6J 6L 6M 6N * SELECTED DEVICE RANGE OFFERED ONLY 3 - 185 |
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